Finfet device and method of forming the same

ABSTRACT

A FinFET device and a method of forming the same are disclosed. In accordance with some embodiments, a FinFET device includes a substrate having at least one fin, a gate stack across the at least one fin, a strained layer aside the gate stack and a silicide layer over the strained layer. The strained layer has a boron surface concentration greater than about 2E20 atom/cm 3  within a depth range of about 0-5 nm from a surface of the strained layer.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experiencedexponential growth. Technological advances in IC materials and designhave produced generations of ICs where each generation has smaller andmore complex circuits than the previous generation. In the course of ICevolution, functional density (i.e., the number of interconnecteddevices per chip area) has generally increased while geometry size(i.e., the smallest component (or line) that can be created using afabrication process) has decreased. This scaling down process generallyprovides benefits by increasing production efficiency and loweringassociated costs.

Such scaling down has also increased the complexity of processing andmanufacturing ICs and, for these advances to be realized, similardevelopments in IC processing and manufacturing are needed. For example,a three dimensional transistor, such as a fin-type field-effecttransistor (FinFET), has been introduced to replace a planar transistor.Although existing FinFET devices and methods of forming FinFET deviceshave been generally adequate for their intended purposes, they have notbeen entirely satisfactory in all respects.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the criticaldimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1A to FIG. 1F are schematic cross-sectional views of a method offorming a FinFET device in accordance with some embodiments.

FIG. 2 is a flow chart of a method of forming a FinFET device inaccordance with some embodiments.

FIG. 3 is a flow chart of a method of forming a FinFET device inaccordance with alternative embodiments.

FIG. 4 is a flow chart of a method of forming a FinFET device inaccordance with yet alternative embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a second feature over or on a first feature in the description thatfollows may include embodiments in which the second and first featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the second and first features,such that the second and first features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath”, “below”, “lower”,“on”, “over”, “overlying”, “above”, “upper” and the like, may be usedherein for ease of description to describe one element or feature'srelationship to another element(s) or feature(s) as illustrated in thefigures. The spatially relative terms are intended to encompassdifferent orientations of the device in use or operation in addition tothe orientation depicted in the figures. The apparatus may be otherwiseoriented (rotated 90 degrees or at other orientations) and the spatiallyrelative descriptors used herein may likewise be interpretedaccordingly.

FIG. 1A to FIG. 1F are schematic cross-sectional views of a method offorming a FinFET device in accordance with some embodiments.

Referring to FIG. 1A, a substrate 100 with one or more fins 102 isprovided. In some embodiments, the substrate 100 includes asilicon-containing substrate, a silicon-on-insulator (SOI) substrate, ora substrate formed of other suitable semiconductor materials. In someembodiments, the substrate 100 may have doped regions therein configuredfor a P-type FinFET device. In some embodiments, the substrate 100 hasan isolation layer formed thereon. Specifically, the isolation layercovers lower portions of the fins 102 and exposes upper portions of thefins 102. In some embodiments, the isolation layer is a shallow trenchisolation (STI) structure.

In some embodiments, the substrate 100 has at least two gate stacks 111formed thereon, spacers 104 formed on the sidewalls of the gate stacks111, strained layers 106 formed therein, and a first dielectric layer108 formed aside the gate stacks 111 and over the strained layers 106.

In some embodiments, the method of forming the intermediate structure ofFIG. 1A includes forming two dummy gate stacks across the fins 102,forming spacers 104 on the sidewalls of the dummy gate stacks, formingstrained layers 106 at two sides of each fin 102, forming a firstdielectric layer 108 aside the dummy gate stacks and over the strainedlayers 106, and replacing the dummy gate stacks with gate stacks 111.

In some embodiments, the dummy gate stacks includes a silicon-containingmaterial, such as polysilicon, amorphous silicon or a combinationthereof. In some embodiments, the dummy gate stacks extend in adirection different from (e.g., perpendicular to) the extendingdirection of the fins 102. In some embodiments, the method of formingthe dummy gate stacks includes forming a stacked layer on the substrate100 and patterning the stacked layer with photolithography and etchingprocesses.

In some embodiments, the spacers 104 include a nitrogen-containingdielectric material, a carbon-containing dielectric material or both,and the spacers 104 have a dielectric constant less than about 10, oreven less than about 5. In some embodiments, the spacers 104 includesSiN, SiCN, SiOCN, SiOR (wherein R is an alkyl group such as CH₃, C₂H₅ orC₃H₇), SiC, SiOC, SiON, a combination thereof or the like. In someembodiments, the method of forming the spacers 104 includes forming aspacer material layer on the substrate 100, and partially removing thespacer material layer by an anisotropic etching process.

In some embodiments, two lightly doped regions 103 are formed in eachfin 102 beside each of the dummy gate stacks prior to the formation ofthe spacers 104. In some embodiments, the lightly doped regions 103includes a P-type dopant such as boron. In some embodiments, the lightlydoped regions 103 can be referred to as lightly doped source/drain (LDD)regions.

In some embodiments, two strained layers 106 are formed beside each ofthe dummy gate stacks, and one of the strained layers 106 is between theadjacent dummy gate stacks. In some embodiments, the strained layers 106include silicon germanium (SiGe) for a P-type FinFET device. In someembodiments, the strained layers 106 may be optionally implanted with aP-type dopant such as boron. The method of forming the strained layers106 includes forming recesses in the fins 102. In some embodiments, therecesses have a middle-wide profile. The strained layers 106 are formedby an in-situ boron-doped epitaxy process from the recesses. Benefits ofsuch boron-doped epitaxy process are limited because it only produces alow concentration surface profile. In other words, the beam line implantcannot deliver a high surface concentration dopant profile. In someembodiments, the strained layers 106 can be referred to as source/drainregions. In some embodiments, the strained layers 106 can be formed in acrystalline state. Besides, the tops of the strained layers 106 can beas high as or higher than the bottoms of the spacers 104.

In some embodiments, the first dielectric layer 108 includes nitridesuch as silicon nitride, oxide such as silicon oxide, phosphosilicateglass (PSG), borosilicate glass (BSG), boron-doped phosphosilicate glass(BPSG), a combination thereof or the like, and is formed by a suitabledeposition technique such as spin-coating, CVD, flowable CVD, PECVD,ALD, a combination thereof or the like. In some embodiments, the topsurface of the first dielectric layer 108 is substantially level withthe top surfaces of the dummy gate stacks. In some embodiments, acontact etch stop layer (CESL) is formed after the step of forming thestrained layers 106 and before the step of forming the first dielectriclayer 108, and the CESL includes SiN, SiC or the like.

In some embodiments, the dummy gate stacks are replaced with gate stacks111. In some embodiments, the dummy gate stacks are removed to form gatetrenches in the first dielectric layer 108, and the gate stacks 111 arethen formed in the gate trenches. In some embodiments, the method offorming the gate stacks 111 includes forming a stacked layer with CVD,PVD, plating, or a suitable process, and then performing a CMP processto remove the stacked layer outside of the gate trenches.

In some embodiments, each of the gate stacks 111 includes a gatedielectric layer 110 and a gate 112 (or called “replacement gate”) onthe gate dielectric layer 110. In some embodiments, the gate stacks 111extend in a direction different from (e.g., perpendicular to) theextending direction of the fins 102. In some embodiments, each of thegate dielectric layers 110 surrounds the sidewall and bottom of thecorresponding gate 112 and on the top and sidewall of each fin 102, asshown in FIG. 1A. In some embodiments, an interfacial layer such as asilicon oxide layer is formed between the gate dielectric layer 110 andeach fin 102.

In some embodiments, each of the gate dielectric layers 110 includes ahigh-k material having a dielectric constant greater than about 10. Insome embodiments, the high-k material includes metal oxide, such asZrO₂, Gd₂O₃, HfO₂, BaTiO₃, Al₂O₃, LaO₂, TiO₂, Ta₂O₅, Y₂O₃, STO, BTO,BaZrO, HfZrO, HfLaO, HfTaO, HfTiO, a combination thereof, or a suitablematerial. In alternative embodiments, the gate dielectric layer 110 canoptionally include a silicate such as HfSiO, LaSiO, AlSiO, a combinationthereof, or a suitable material.

In some embodiments, each of the gates 112 includes a metal materialsuitable for forming a metal gate or portion thereof. In someembodiments, each of the gates 112 includes a work function metal layerand a fill metal layer on the work function metal layer. In someembodiments, the work function metal layer is a P-type work functionmetal layer to provide a gate electrode that properly performs in aP-type FinFET device. The P-type work function metal layer includes TiN,WN, TaN, conductive metal oxide, and/or a suitable material. The fillmetal layer includes copper (Cu), aluminum (Al), tungsten (W), or asuitable material. In some embodiments, each of the gates 112 canfurther include a liner layer, an interface layer, a seed layer, anadhesion layer, a barrier layer, a combination thereof or the like.

Referring to FIG. 1B, upper portions of the gate stacks 111 are removedto form recesses 113 exposing the gates 112. Specifically, portions ofthe gates 112 and portions of the gate dielectric layers 110 are removedby an etching back process, and the remaining gates 112 and the gatedielectric layers 110 are exposed by the recesses 113. In someembodiments, one of the recesses 113 is between two adjacent spacers104. Thereafter, cap patterns 114 are formed in the recesses 113covering the gates 112. In some embodiments, the cap patterns 114 areconfigured to protect the gates 112 from being damaged during thefollowing contact hole defining step. In some embodiments, a cap layeris formed on the substrate 100 filling the recesses 113. The cap layerincludes SiN, SiC, SiCN, SiON, SiCON, a combination thereof or the like,and is formed by a suitable deposition technique such as CVD,plasma-enhanced CVD (PECVD), ALD, remote plasma ALD (RPALD),plasma-enhanced ALD (PEALD), a combination thereof or the like. A CMPprocess is then performed to remove the cap layer outside of therecesses 113.

Thereafter, a second dielectric layer 116 is formed over the cappatterns 114 and the first dielectric layer 108. In some embodiments,the second dielectric layer 116 includes a material the same as that ofthe first dielectric layer 108. In alternative embodiments, the seconddielectric layer 116 and the first dielectric layer 108 are made bydifferent materials. In some embodiments, the second dielectric layer116 includes nitride such as silicon nitride, oxide such as siliconoxide, PSG, BSG, BPSG, a combination thereof or the like, and is formedby a suitable deposition technique such as spin-coating, CVD, flowableCVD, PECVD, ALD, a combination thereof or the like.

Referring to FIG. 1C, the second dielectric layer 116 and the firstdielectric layer 108 are patterned or partially removed to form openings117 (or called “contact holes”) exposing the strained layers 106,respectively. In some embodiments, a mask layer such as a photoresistlayer is formed on the second dielectric layer 116, covering thenon-target area and exposing the target area. In some embodiments, themask layer covers an N-type FinFET device area and exposes the intendedlocations of the subsequently formed contact holes in a P-type FinFETdevice area. Thereafter, an etching process is performed by using themask layer as a mask. In some embodiments, the etching process isreferred to as a self-aligned contact (SAC) etching process by using thespacers 104 and the cap patterns 114 as self-aligned masks. In someembodiments, portions of the spacers 104 and top corners of cap patterns114 are removed during the etching process, and the openings 117 areformed with tilted sidewalls, as shown in FIG. 1C. In alternativeembodiments, the openings 117 can be formed with substantially verticalsidewalls. In some embodiments, the aspect ratio of the openings 117 isgreater than about 5 or even greater than about 10. Besides, theopenings 117 can be formed as plugs, pillars, strips, walls or anysuitable shapes as needed.

Referring to FIG. 1D, a doping step 118 is performed to the strainedlayers 106 to form shallow doped regions 120 therein, and the shallowdoped regions 120 and the strained layers 106 have the same conductivitytype. In some embodiments, the doping step 118 is a single step. Inalternative embodiments, the doping step 118 includes multiplesub-steps. In some embodiments, the shallow doped regions 120 and thestrained layers 106 include a P-type dopant such as boron. That is, thedoping step 118 is a boron doping step. In some embodiments, the shallowdoped regions 120 have a depth of less than about 20 nm, less than about15 nm, less than about 10 nm or even less than 8 nm.

In some embodiments, the doping step 118 causes a surface amorphizationin each of the strained layers 106. In some embodiments, the shallowdoped regions 120 are formed in a fully amorphous state. In such case,the doping step 118 functions as a pre-amorphous implant (PAI) step, sothe conventional PAI step with germanium (Ge) for confining the silicideformation to the amorphous regions is not necessary. In other words, thedoping step 118 of the disclosure replaces the conventional germaniumPAI step.

In alternative embodiments, the shallow doped regions 120 are formed ina partially amorphous state; that is, the shallow doped regions 120 areformed in a mixed crystalline-amorphous state and having some degree ofstructural order. In such case, a PAI step can be performed before orafter the doping step 118 to fully amorphize the shallow doped regions120. Such PAI step can be implemented with germanium (Ge), xenon (Xe) orthe like.

In some embodiments, the doping step 118 is an ion implantation step. Insome embodiments, the ion implantation step is performed at an energy ofabout 1 KeV to 2 KeV and a dose of about 2E15 atom/cm² to 6E15 atom/cm².Upon the ion implantation step, the strained layers 106 or the shallowdoped regions 120 have a boron surface concentration greater than about2E20 atom/cm³ within a depth range of about 0-5 nm from surfaces of thestrained layers 106. In some embodiments, the boron surfaceconcentration of the strained layers 106 or the shallow doped regions120 is in a range from about 2E20 to 1E21 atom/cm³. For example, theboron surface concentration of the strained layers 106 or the shallowdoped regions 120 can be, for example but is not limited to, about 2E20,3E20, 4E20, 5E20, 6E20, 7E20, 8E20, 9E20, 1E21 atom/cm³, including anyrange between any two of the preceding values.

In addition to the surface amorphization, the ion implantation stepincreases the surface concentration of the strained layers 106 andtherefore reduces the contact resistance (Rcsd). Besides, the ionimplantation step causes a tailing doping profile. The tailing dopingprofile laterally extends toward the adjacent lightly doped regions 103and helps to reduce the parasitic resistance (Rp) and therefore suppressthe short channel effect. The tailing doping profile vertically extendstoward the bottom of the corresponding strained layer 106 and helps tomodulate the threshold voltage (Vt) of the device.

In alternative embodiments, the doping step 118 is a plasma doping step.In some embodiments, the plasma doping step is performed at an energy ofabout 1 KeV to 2 KeV and a dose of about 2E15 atom/cm² to 6E15 atom/cm².In some embodiments, the plasma doping process is performed by using aboron-containing gas including diborane (B₂H₆) and a dilution gasincluding hydrogen (H₂), argon (Ar), helium (He) or a combinationthereof. In some embodiments, the plasma doping process is performed byusing about 0.1%-10% of the boron-containing gas and about 90%-99.9% ofthe dilution gas. For example, the plasma doping process is performed byusing about 0.1%-5% or 0.1%-2% (e.g., about 0.5%) of B₂H₆ and about95%-99.9% or 98%-99.9% (e.g., about 95.5%) of helium.

Upon the plasma doping step, the strained layers 106 or the shallowdoped regions 120 have a boron surface concentration greater than about2E20 atom/cm³ within a depth range of about 0-5 nm from surfaces of thestrained layers 106. In some embodiments, the boron surfaceconcentration of the strained layers 106 or the shallow doped regions120 is in a range from about 1E21 to 5E21 atom/cm³. For example, theboron surface concentration of the strained layers 106 or the shallowdoped regions 120 can be, for example but is not limited to, about 1E21,2E21, 3E21, 4E21, 5E21 atom/cm³, including any range between any two ofthe preceding values.

In addition to the surface amorphization, the plasma doping stepincreases the surface concentration of the strained layers 106 andtherefore reduces the contact resistance (Rcsd). Specifically, theplasma doping step causes a highly abrupt doping profile in anultra-shallow region near the surface, so the contact resistance (Rcsd)can be significantly reduced.

Referring to FIG. 1E, a metal layer 122 is formed on the strained layers106 after the boron doping step 118. In some embodiments, the metallayer 122 includes nickel (Ni), cobalt (Co), tungsten (W), tantalum(Ta), titanium (Ti), titanium nitride (TiN), a combination thereof orthe like, and is formed by a suitable deposition, such as CVD, PVD orthe like. In some embodiments, the metal layer 122 is a multi-layerstructure of Ti/TiN.

Thereafter, an annealing step 124 is performed to the substrate 100, andsilicide layers 126 are therefore formed on the strained layers 106respectively. In some embodiments, a salicide (self-aligned silicide)process is performed, so a metal material formed next to a siliconmaterial is reacted to form a silicide material. The silicide materialincludes nickel silicide (NiSi), cobalt silicide (CoSi), tungstensilicide (WSi), tantalum silicide (TaSi), titanium silicide (TiSi), acombination thereof or the like. In some embodiments, the silicidelayers 126 are formed in contact with the strained layers 106 or theshallow doped regions 120.

In some embodiments, the shallow doped regions 120 are amorphous andtherefore do not exacerbate the defects, so the silicide layers 126 arecontained within the amorphous regions, and the device performance isaccordingly improved.

In some embodiments, the annealing step 124 is performed at atemperature of about 850° C. to 1,000° C. Upon the annealing step 124,the shallow doped regions 120 in an amorphous state are transformed intoshallow doped regions 120 a in a crystalline state. Besides, theannealing step 124 recovers the defects caused by the doping step 118and an optional PAI step before or after the doping step 118. Theun-reacted metal of the metal layer 122 is then removed or etched away.

Referring to FIG. 1F, connectors 128 are formed in the openings 117. Insome embodiments, the connectors 128 are intended to represent any typeof conductive materials and structures that are electrically connectedto the strained layers 106. In some embodiments, the connectors 128include metal, such as W, Cu, an alloy thereof or any metal materialwith suitable resistance and gap-fill capability. In some embodiments,after the silicide layers 126 are formed, a metal layer is formed on thesubstrate 100 filling in the openings 117. The metal layer is formed bysputtering, CVD, electrochemical plating (ECP), a combination thereof orthe like. A planarization step such as CMP is then performed to remove aportion of the metal layer until tops of the cap patterns 114 areexposed. In some embodiments, the tops of the connectors 128 aresubstantially coplanar with the tops of the cap patterns 114. A FinFETdevice of the disclosure is thus completed.

The above embodiments in which each of the gate dielectric layers, thegates, the spacers, the cap patterns, the first dielectric layer, thesecond dielectric layer, and the connectors is a single layer areprovided for illustration purposes, and are not construed as limitingthe present disclosure. In some embodiments, at least one of thesedescribed elements can be a multi-layer structure as needed.

The above-mentioned process steps in FIG. 1A-1F can be conciselyillustrated with reference to the flow charts of FIG. 2 to FIG. 4.

At step S200, a substrate 100 is provided with a gate stack 111 formedthereon, a strained layer 106 formed therein and a first dielectriclayer 108 formed aside the gate stack 111 and over the strained layer106, as shown in FIG. 1A. In some embodiments, a cap pattern 114 isprovided above the gate stack 111 and between spacers 104 on thesidewalls of the gate stack 111, and a second dielectric layer 116 isformed over the cap pattern 114 and the first dielectric layer 108, asshown in FIG. 1B.

At step S202, an opening 117 is formed through the first dielectriclayer 108 and therefore exposes the strained layer 106, as shown in FIG.1C. In some embodiments, the opening 117 is formed with a self-alignedcontact (SAC) etching process.

At step S204, a doping step 118 is performed to the strained layer 106,as shown in FIG. 1D. In some embodiments, the doping step 118 causes asurface amorphization in the strained layer 106. Specifically, thedoping step 118 forms a shallow amorphous region (e.g., shallow dopedregion 120) in the strained layer 106. In some embodiments, the shallowdoped region 120 has a high surface concentration greater than about2E20 atom/cm³ within a depth range of about 0-5 nm from a top surfacethereof. Besides, the shallow doped region 120 and the strained layer106 have the same conductivity type. In some embodiments, the dopingstep 118 is an ion implantation process. In alternative embodiments, thedoping step 118 is a plasma doping process. In some embodiments, thedoping step 118 is a boron doping step performed at an energy of about 1KeV to 2 KeV and a dose of about 2E15 atom/cm² to 6E15 atom/cm².

At step S206, a silicide layer 126 is formed on the strained layer 106after the doping step 118, as shown in FIG. 1E. In some embodiments, ametal layer 122 is formed on the strained layer 106 immediately afterthe boron doping step 118, and an annealing step 124 is then formed tothe substrate 100. In some embodiments, the annealing step is performedat a temperature of about 850° C. to 1,000° C. In some embodiments,during the step of forming the silicide layer 126, the amorphous shallowregion (e.g., shallow doped region 120) is transformed into acrystalline shallow region (e.g., shallow doped region 120 a).

At step 208, a connector 128 is formed in the opening 117, as shown inFIG. 1F. In some embodiments, the connector 128 is electricallyconnected to the strained layer 106 or the silicide layer 126. In someembodiments, the shallow doped region 120 a in the surface portion ofthe strained layer 106 is provided with such a high dopantconcentration, so the contact resistance can be effectively reduced.

The process flow of FIG. 3 is similar to that of FIG. 2, and thedifference lies in that the process flow of FIG. 3 further includes apre-amorphous implant step (step S203) before the doping step 118 (stepS204).

The process flow of FIG. 4 is similar to that of FIG. 2, and thedifference lies in that the process flow of FIG. 4 further includes apre-amorphous implant step (step S205) after the doping step 118 (stepS204).

The structure of the FinFET device of the disclosure is described withreference to FIG. 1F.

In some embodiments, a FinFET device includes a substrate 100, a gatestack 111, a strained layer 106, and a silicide layer 126. The substrate100 has at least one fin 102. The gate stack 111 is across the at leastone fin 102. The strained layer 106 is aside the gate stack 111 and hasa boron surface concentration greater than about 2E20 atom/cm³ within adepth range of about 0-5 nm from a surface of the strained layer 106.The silicide layer 126 is over and in contact with the strained layer106.

In some embodiments, when the boron surface concentration of thestrained layer 106 is provided by an ion implantation process, the boronsurface concentration of the strained layer 106 is in a range from about2E20 to 1E21 atom/cm³. In alternative embodiments, when the boronsurface concentration of the strained layer 106 is provided by a plasmadoping process, the boron surface concentration of the strained layer106 is in a range from about 1E21 to 5E21 atom/cm³.

The described embodiments in which a P-type FinFET device and a methodof forming the same are provided for illustration purposes, and are notconstrued as limiting the present disclosure. In some embodiments, thedescribed method can be implemented to form an N-type FinFET device.Specifically, the phosphor doping step replaces the boron doping step,and the phosphor doping step is performed at an energy of about 2 KeV to5 KeV and a dose of about 2E15 atom/cm² to 6E15 atom/cm², for example.It is appreciated by people having the ordinary skill in the art thatthe conductivity types of the described doped regions/layers can bechanged and configured for an N-type FinFET device upon the processrequirements.

In the above-mentioned embodiments, a “gate last” process is implementedto form a FinFET device. However, another process such as a “gate first”process or another type of device (e.g., planar device) can be appliedby using similar processes as described herein. The methods disclosedherein can be easily integrated with a CMOS process flow and do notrequire additional complicated steps to achieve the desired results. Itis understood that embodiments disclosed herein offer differentadvantages, and that no particular advantage is necessarily required forall embodiments.

In view of the above, at least one boron doping process is performed tothe device after a contact hole definition and before a silicidedeposition. Such boron doping process provides a high surface dopantconcentration that is effective in reducing the contact resistance andtherefore boosting the device performance.

In some embodiments, the boron doping process of the disclosure replacesthe conventional PAI step. The conventional PAI step usually degradesthe source/drain conductivity and therefore reduces the contactresistance. However, the boron doping process of the disclosure does nothave such issues. Instead, the boron doping process of the disclosureprovides a high surface concentration so as to effectively reduce thecontact resistance.

In accordance with some embodiments of the present disclosure, a FinFETdevice includes a substrate, a gate stack, a stained layer and asilicide layer. The substrate has at least one fin. The gate stack isacross the at least one fin. The strained layer is aside the gate stackand has a boron surface concentration greater than about 2E20 atom/cm³within a depth range of about 0-5 nm from a surface of the strainedlayer. The silicide layer over the strained layer.

In accordance with alternative embodiments of the present disclosure, amethod of forming a FinFET device includes the following steps. Asubstrate is provided with a gate stack formed thereon, a strained layerformed therein and a first dielectric layer formed aside the gate stackand over the strained layer. An opening is formed through the firstdielectric layer and exposes the strained layer. A doping step isperformed to the strained layer to form a shallow doped region therein,wherein the shallow doped region and the strained layer have the sameconductivity type. A silicide layer is formed on the strained layerafter the doping step.

In accordance with yet alternative embodiments of the presentdisclosure, a method of forming a FinFET device includes the followingsteps. A substrate is provided with a gate stack formed thereon, astrained layer formed therein and a first dielectric layer formed asidethe gate stack and over the strained layer. An opening is formed throughthe first dielectric layer and exposes the strained layer. A borondoping step is performed to the strained layer, and the boron dopingstep causes a surface amorphization. A metal layer is formed on thestrained layer immediately after the boron doping step. An annealingstep is performed to the substrate.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. (canceled)
 2. (canceled)
 3. (canceled)
 4. (canceled)
 5. (canceled) 6.A method of forming a FinFET device, comprising: providing a substratehaving a gate stack formed thereon, a strained layer formed therein anda first dielectric layer formed aside the gate stack and over thestrained layer; forming an opening through the first dielectric layer,the opening exposing the strained layer; performing a doping step to thestrained layer to form a shallow doped region therein, wherein theshallow doped region and the strained layer have the same conductivitytype; and forming a silicide layer on the strained layer after thedoping step, wherein the method further comprises a pre-amorphousimplant (PAI) step before or after the doping step, and the PAI step andthe doping step are performed with different elements.
 7. The method ofclaim 6, wherein the shallow doped region is an amorphous region.
 8. Themethod of claim 6, wherein the doping step is a boron doping step or aphosphor doping step.
 9. The method of claim 8, wherein the boron dopingstep is performed at an energy of about 1 KeV to 2 KeV and a dose ofabout 2E15 atom/cm² to 6E15 atom/cm².
 10. The method of claim 8, whereinthe phosphor doping step is performed at an energy of about 2 KeV to 5KeV and a dose of about 2E15 atom/cm² to 6E15 atom/cm².
 11. The methodof claim 6, wherein the doping step is an ion implantation process. 12.The method of claim 6, wherein the doping step is a plasma dopingprocess.
 13. The method of claim 12, wherein the plasma doping processis performed by using about 0.1%-10% of a boron-containing gas and about90%-99.9% of a dilution gas.
 14. (canceled)
 15. A method of forming aFinFET device, comprising: providing a substrate having a gate stackformed thereon, a strained layer formed therein and a first dielectriclayer formed aside the gate stack and over the strained layer; formingan opening through the first dielectric layer, the opening exposing thestrained layer; performing a boron doping step to the strained layer,the boron doping step causing a surface amorphization; forming a metallayer on the strained layer immediately after the boron doping step; andperforming an annealing step to the substrate, wherein the boron dopingstep is performed at an energy of about 1 KeV to 2 KeV and a dose ofabout 2E15 atom/cm² to 6E15 atom/cm².
 16. The method of claim 15,wherein the boron doping step is an ion implantation process.
 17. Themethod of claim 15, wherein the boron doping step is a plasma dopingprocess.
 18. The method of claim 17, wherein the plasma doping processis performed by using a boron-containing gas and a dilution gas in aratio of about 0.1%-5% to 95%-99.9%.
 19. (canceled)
 20. The method ofclaim 15, wherein the annealing step is performed at a temperature ofabout 850° C. to 1,000° C.
 21. A method of forming a FinFET device,comprising: providing a substrate having a gate stack formed thereon, astrained layer formed therein and a first dielectric layer formed asidethe gate stack and over the strained layer; forming an opening throughthe first dielectric layer, the opening exposing the strained layer;performing a boron doping step to the strained layer such that a boronsurface concentration is at least about 2E20 atom/cm³ within a depthrange of about 0-5 nm from a surface of the strained layer; and forminga silicide layer on the strained layer after the boron doping step. 22.The method of claim 21, wherein the boron doping step is an ionimplantation process.
 23. The method of claim 22, wherein the boronsurface concentration of the strained layer is in a range from about2E20 to 1E21 atom/cm³.
 24. The method of claim 21, wherein the borondoping step is a plasma doping process.
 25. The method of claim 24,wherein the boron surface concentration of the strained layer is in arange from about 1E21 to 5E21 atom/cm³.